Production of oxides single crystals (Al2O3, Y3Al5O12) of 25mm diameter and 75mm length
Production of oxides single crystals (Al2O3, Y3Al5O12) of 25 mm diameter and 75 mm length.
In Czochralski (CZ) growth technique crystals are grown by slow pulling of a seed/wire/ capillary from the free surface of the melt of the material to be grown into crystal contained in a crucible. A growth station, to contain crucible and minimizes heat losses (by conduction and radiation), is made using appropriate ceramic tubes, felts, and wools. The shape of the crystal can be determined by controlling the diameter of the growing crystal through optimization of the melt temperature and pull rate depending on properties of the material under consideration. This technology can be used to grow oxide single crystals for various applications like scintillator, laser host, gem stone etc.
Production of oxides single crystals (Al2O3, Y3Al5O12) of 25 mm diameter and 75 mm length.
In Czochralski technique crystals are grown by slow pulling of a seed/wire/ capillary from the free surface of a melt of the material contained in a crucible. A growth station, to contain crucible and minimizes heat losses (by conduction and radiation), is made using appropriate ceramic tubes, felts, and wools. The shape of the crystal can be determined by controlling the diameter of the growing crystal through the manipulation of the melt temperature and pull rate depending on properties of the material under consideration.
This technology is to grow single crystal of Al2O3 and Y3Al12O5 of 25 mm dia and 75 mm length.
SALIENT FEATURES
 Growth of single crystal of oxide material.
 Oriented crystals.
 Controlled Diameter.
APPLICATIONS
 Growth of Scintillator single crystals like YAP, YAG, GGAG etc.
 Growth of oxide crystal used as Gems like sapphire and Ruby.
 Substrate/window material single crystal.
Production of oxides single crystals (Al2O3, Y3Al5O12) of 25 mm diameter and 75 mm length
In Czochralski technique crystals are grown by slow pulling of a seed/wire/ capillary from the free surface of a melt of the material contained in a crucible. A growth station, to contain crucible and minimizes heat losses (by conduction and radiation), is made using appropriate ceramic tubes, felts, and wools. The shape of the crystal can be determined by controlling the diameter of the growing crystal through the manipulation of the melt temperature and pull rate depending on properties of the material under consideration.
This technology is to grow single crystal of Al2O3 and Y3Al12O5 of 25 mm dia and 75 mm length.
SALIENT FEATURES
• Single crystal growth.
• Dimensions 5-25 mm diameter, 75 mm length
• Crack free and transparent crystals.
• Diameter of grown crystals can be controlled.
APPLICATIONS
• Scintillator detector (YAG:Ce) etc.
• Growth of oxide crystal used as Gems like sapphire and Ruby.
• Substrate single crystal.
INFRASTRUCTURE REQUIRED
Uninterrupted three phase power supply (50 kW).
Crystal Growth system.
Clean working environment with controlled ambient temperature (40 sqm).
Space
Instrument foot print : 4 sq. Meter
Total working space : 50 sq. meter
RAW MATERIAL
Most of the components and material are available within the country and some components (power supply, load cell and translation stage) need to be imported through local agents.
MANPOWER
One post graduate in science, one electronics engineer with software skills, one trained technicians will be required for manufacture/production of this product.
SR NO. | Organization name | Licensee Name | Licensee Code | ACQUIRED ON | Valid Till | Address | City | State | Phone | |
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01 | RAANA SEMICONDUCTORS PRIVATE LIMITED | RAJASEKAR ELAVARASAN | 580 | 15-06-2023 | 14-06-2028 | Raana Semiconductors Pvt Ltd No 5 Opp Sai Baba Temple Tank Street HOSUR 635109, Tamil Nadu | Hosur | Tamil Nadu | rajasekar@raana.in | 9944677040 |
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General License Fee : ₹ 1,104,000.00 (Eleven Lakh Four Thousand)
General Royalty : 0%